AM1331P analog power preliminary publication order number: ds-am1331_b 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) (ohm) i d (a) 0.112 @ v gs = -10v -1.5 0.172 @ v gs = -4.5v -1.2 product summary -30 p-channel 30-v (d-s) mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sc70-3 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature d s g symbol maximum units v ds -30 v gs 20 t a =25 o c -1.5 t a =70 o c -1.2 i dm -2.5 i s 0.28 a t a =25 o c 0.34 t a =70 o c 0.22 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 5 sec 375 steady-state 430 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja www.datasheet.co.kr datasheet pdf - http://www..net/
AM1331P analog power preliminary publication order number: ds-am1331_b 2 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production test ing. c. repetitive rating, pulse width limited by junction t emperature. analog power (apl) reserves the right to make changes without fu rther notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitabili ty of its products for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, a nd specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in apl data sheets and/or specifica tions can and do vary in different applications and actual performance may vary over t ime. all operating parameters, including ?typical? must be validated for each customer application by customer?s technical experts. apl d oes not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as co mponents in systems intended for surgical implant i nto the body, or other applications intended to support or sustain life, or for any oth er application in which the failure of the apl prod uct could create a situation where personal injury or death may occur. should buyer purchase o r use apl products for any such unintended or unaut horized application, buyer shall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmles s against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal i njury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = -24 v, v gs = 0 v -1 v ds = -24 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -10 v -5 a v gs = -10 v, i d = -1.5 a 112 v gs = -4.5 v, i d = -1.2 a 172 forward tranconductance a g fs v ds = -5 v, i d = -1.5 a 9 s diode forward voltage v sd i s = -0.46 a, v gs = 0 v -0.65 v total gate charge q g 7.2 gate-source charge q gs 1.7 gate-drain charge q gd 1.5 turn-on delay time t d(on) 10 rise time t r 9 turn-off delay time t d(off) 27 fall-time t f 11 r ds(on) m ? unit v dd = -10 v, i l = -1 a, v gen = -4.5 v, r g = 6 ? ns dynamic b v ds = -10 v, v gs = -5 v, i d = -1.5 a nc drain-source on-resistance a specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol parameter limits www.datasheet.co.kr datasheet pdf - http://www..net/
AM1331P analog power preliminary publication order number: ds-am1331_b 3 typical electrical characteristics (p-channel) output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 v ds - drain-to-source voltage (v) i d - drain current (a) v gs =-10v -4.5v -3.0v 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 v gs - gate-to-source voltage (v) i d - drain current (a) t a = -55 o c 25 o c 125 o c 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 i d - drain current (a) r ds(on) , normalized on-resistance -10v -4.5v -10 -8 -6 -4 -2 0 0 2 4 6 8 10 12 q g - total gate charge (nc) v gs - gate-to-source voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) - on-resistance (normalized) v gs = -10v 0 200 400 600 800 0 6 12 18 24 30 vds - drain-to-source voltage (v) c - capacitance (pf) c rss c oss c iss www.datasheet.co.kr datasheet pdf - http://www..net/
AM1331P analog power preliminary publication order number: ds-am1331_b 4 typical electrical characteristics (p-channel) normalized thermal transient impedance, junction-to-ambi ent single pulse power threshold voltage source-drain diode forward voltage on-resistance vs. gate-to source voltage 0 10 20 30 0.01 0.1 1 10 100 time (sec) power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration (sec) normalized effective transient thermal impedance r ja (t) = r(t) * r ja r ja = 125 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t p(pk t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 0 0.1 0.2 0.3 0.4 2 4 6 8 10 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohm) 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 t j - temperature ( o c) v gs(th) variance (v) i d = -250 a www.datasheet.co.kr datasheet pdf - http://www..net/
AM1331P analog power preliminary publication order number: ds-am1331_b 5 package information www.datasheet.co.kr datasheet pdf - http://www..net/
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